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POWER SEMICONDUCTORS
GaN
Gallium Nitride (GaN) is a wide bandgap semiconductor material with a high breakdown electric field and high thermal conductivity. It is widely used in high frequency, high voltage power electronic devices such as fast chargers, 5G stations, and power devices for electric vehicles.
SiC
SiC (Silicon Carbide) belongs to the family of wide bandgap materials. Its bandgap (3.3 eV) is three times that of silicon. Because of their high efficiency, robustness, and reliability, SiC MOSFETs can improve system performance and increase energy efficiency. XIINERGY is committed to being your trusted partner. Our innovative team can bring great success to our cooperation.
Si
Silicon (Si) is the most widely used semiconductor material in the world and the “cornerstone” of the modern electronics and information industry. With its mature manufacturing processes, excellent electrical properties, and abundant natural availability, Silicon has become the essential substrate for integrated circuits (ICs), discrete devices, and other electronic components.
POWER MODULES
SiC MODULE
SiC MOSFET modules offer advantages such as high-voltage, high-frequency operation, high efficiency, low losses, and reliable performance at elevated temperatures, enabling significant improvements in system power density and overall reliability.
IGBT MODULE
IGBT modules combine the fast-switching characteristics of a MOSFET with the high-current capability of a bipolar transistor (GTR). It offers high efficiency, simple drive requirements, and stable thermal performance, and is widely used in new-energy systems, rail transit, and other applications.
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GaN HEMT GaN HEMT

GaN HEMT

GaN HEMTs offer advantages such as ultra-high frequency and high efficiency, enabling higher power density and more compact product designs.
GaN HEMTs offer advantages such as ultra-high frequency and high efficiency, enabling higher power density and more compact product designs.
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