MOBILITY SOLUTIONS

Wide-bandgap semiconductors, particularly Silicon Carbide (SiC) and Gallium Nitride (GaN), are transforming power electronics in electric mobility with their high voltage capability, thermal robustness, and high-frequency performance.

Their primary applications include traction inverters and vehicle energy systems. SiC power modules used in traction inverters significantly reduce switching and conduction losses, improving overall power conversion efficiency. This enhances drivetrain performance, reduces system size and weight, and can extend electric vehicle driving range by approximately 10%.

In charging systems, SiC devices support the development of 800V high-voltage fast-charging platforms. Both onboard chargers (OBCs) and DC fast-charging stations benefit from higher switching frequencies, lower thermal stress, and increased power density. These advantages significantly improve charging speed, enabling ultra-fast charging that can deliver up to 200 kilometers of driving range in just five minutes.

By improving energy efficiency and charging performance, wide-bandgap semiconductors are helping solve key EV challenges and accelerating the global transition toward full vehicle electrification.